[5p-PB8-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[5p-PB8-6] Characterization of oxide films on SiC substrates grown by the solution method

〇Tomoaki Furusho¹, Naoyuki Kawabata¹, Masayuki Furuhashi¹, Tomoakatsu Watanabe¹, Hiroshi Watanabe¹, Satoshi Yamakawa¹, Kenta Murayama², Shunta Harada², Toru Ujihara² (1.Mitsubishi Electric, 2.Nagoya Univ.)

Keywords:SiC, solution growth, oxide film

High quality SiC substrates were achieved by the solution growth. To increase the growth rate, a Si-Cr solvent is used during the crystal growth. Because this metal is fed in grown crystals, it is feared the metal degrades device characteristics. Oxide films on the solution growth substrate were characterized by MOS capacitors. The substrate was covered by epi-layers for prevention of the metal contamination. It was confirmed the metal contamination was prevented.