[5p-PB8-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[5p-PB8-9] Modeling of Busbar Skin Effects using 2D Diffusion Equation

〇Koichi Fukuda¹, Junichi Hattori¹, Yoshihiro Sato¹, Hiroshi Sato¹, Hiroshi Yamaguchi¹ (1.AIST)

Keywords:SiC power module, Busbar Inuductance, modeling

A busbar skin effect model using a diffusion equation is proposed to calculate transient inductance behavior which could be an issue in SiC power modules.