The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)

Koji Kita(Univ. of Tokyo), Hiroaki Hanafusa(Hiroshima Univ.)

11:45 AM - 12:00 PM

[6a-A201-11] Control of Thermal-Plasma-Jet Ejection Direction by Magnetic Field for Application to SiC Annealing

Kenji Teramoto1, Hiroaki Hanahusa1, Seiichiro Higashi1 (1.Hiroshima Univ.)

Keywords:semiconductor, silicon carbide, plasma jet