Oral presentation
[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)
Tue. Sep 5, 2017 9:00 AM - 11:45 AM A203 (203)
Takuji Hosoi(Osaka Univ.)
△:奨励賞エントリー
▲:英語発表
▼:奨励賞エントリーかつ英語発表
空欄:どちらもなし
9:00 AM - 9:15 AM
〇Takahiro Yamasaki1,2, Nobuo Tajima1,2, Jun Nara1,2, Tatsuo Schimizu3, Koichi Kato4, Takao Ohno1,2 (1.NIMS, 2.MARCEED, 3.Toshiba R&D Center, 4.IIS, Univ. of Tokyo)
9:15 AM - 9:30 AM
〇TOMOYA ONO1 (1.CCS, Univ. Tsukuba)
9:30 AM - 9:45 AM
〇Keiichi Yamada1,2, Shinji Fujikake1,3, Youhei Iwahashi1, Shinsuke Harada1, Hiroshi Yano4, Hajime Okumura1 (1.AIST, 2.Toray Research Center, 3.Fuji Electric, 4.Univ. of Tsukuba)
9:45 AM - 10:00 AM
〇Takayuki Abe1, Yuji Yamagishi1, Yasuo Cho1 (1.RIEC, Tohoku univ.)
10:00 AM - 10:15 AM
〇(D)Xufang Zhang1, Dai Okamoto1, Tetsuo Hatakeyama2, Mitsuru Sometani2, Shinsuke Harada2, Noriyuki Iwamuro1, Hiroshi Yano1 (1.Tsukuba Univ., 2.AIST)
10:30 AM - 10:45 AM
〇Tetsuo Hatakeyama1, Yuji kiuchi1, Mitsuru Sometani1, Dai Okamoto2, Shinsuke Harada1, Hiroshi Yano2, Yoshiyuki Yonezawa1, Hajime Okumura1 (1.AIST, 2.Tukuba Univ.)
10:45 AM - 11:00 AM
〇Mizuki Nishida1, Hirohisa Hirai1, Koji Kita1 (1.The Univ. of Tokyo)
11:00 AM - 11:15 AM
[5a-A203-8] Analysis of interface characteristics on p-type SiC MOS capacitors by conductance method
〇(M2)Yuki Karamoto1, Xufang Zhang1, Dai Okamoto1, Mitsuru Sometani2, Tetsuo Hatakeyama2, Shinsuke Harada2, Noriyuki Iwamuro1, Hiroshi Yano1 (1.Tsukuba Univ., 2.AIST)
11:15 AM - 11:30 AM
〇(M1)Keita Tachiki1, Takahisa Ono1, Takuma Kobayashi1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
11:30 AM - 11:45 AM
〇Yuji Kiuchi1,2, Mitsuru Sometani1, Dai Okamoto3, Tetsuo Hatakeyama1, Mitsuo Okamoto1, Shinsuke Harada1, Hiroshi Yano3, Yoshiyuki Yonezawa1, Hajime Okumura1 (1.AIST, 2.NJR, 3.Univ. Tsukuba)