[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-7] Analyses of grinding-induced strain distribution and microstructure in SiC wafer by combining EBSD-Wilkinson and TEM techniques

〇Susumu Tsukimoto^1,2, Tatsuhiko Ise^1,3, Satoshi Segawa^1,3, Genta Maruyama², Satoshi Hashimoto², Tsuguo Sakurada², Junji Senzaki¹, Tomohisa Kato¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST, 2.JFE Techno-Research, 3.Asahi Diamond)

Keywords:grinding process, strain analysis, microstructure

Prior to CMP final process in SiC wafer preparation, grinding process is required to control the damage layer. In the present study, the grinding process using two type of abrasives (#3000 and #8000) is carried out for 4H-SiC wafer and its damage layers are characterized using EBSD-Wilkinson strain analysis and cross-section TEM observation. Remarkable tensile strain is observed to distibute in the vicinity of grinding-induced microcracks from which BPD and stacking faults are emitted. This indicates typical strain/stress concentration near the microcracks described in fracture dynamics. Consequently, correlation between grinding-induced strain and microstructure such as lattice defects is made clear here.