[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

▲ [6p-A201-3] X-ray Topography and Transmission Electron Microscopy Analysis of <c + a> Threading Mixed Dislocations in 4H-SiC

〇Jason Paul Hadorn¹, Ryohei Tanuma¹, Isaho Kamata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

Keywords:4H-SiC, LACBED, threading dislocations

Variants of threading dislocation types are distinguishable in grazing x-ray topography (XRT) by comparing their strain contrast distributions at different g-reflections. For threading mixed dislocations (TMDs), although a theoretical relationship between XRT contrast distribution and variant type exists, direct confirmation must be achieved. In this study, correlations are made between synchrotron XRT images of different TMD variants in 4H-SiC and their Burgers vectors as determined directly by large angle convergent beam electron diffraction (LACBED) via transmission electron microscopy (TEM). LACBED confirms that the TMDs are type. Also, a consistent relationship between XRT and TEM results is obtained, which renders XRT as a useful technique to map TMD variants.