[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

▲ [6p-A201-2] TRPL Analysis of Intentionally N+B-Doped n-type 4H-SiC Epilayers

〇Anli Yang¹, Tetsuya Miyazawa¹, Takeshi Tawara^2,3, Koichi Murata¹, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.Fuji Electric Co., Ltd.)

Keywords:SiC, characterization, Time-resolved photoluminescence

A reduction in carrier lifetimes by intentional boron (B) doping during epitaxial growth has been previously reported, but the related capture mechanism through B-related defects is not yet fully understood. In this work, deep levels related to B and related carrier capture/recombination mechanisms were investigated using deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS) and photoluminescence (PL) measurements.