The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 6, 2017 1:30 PM - 7:00 PM A201 (201)

Shunta Harada(Nagoya Univ.), Masashi Kato(NITech), Takeshi Mitani(AIST)

5:45 PM - 6:00 PM

△ [6p-A201-16] Luminescence characteristics of single photon source near stacking fault in 4H-SiC epilayer

〇Shuhei Akahori1, Yoritaka Furukawa2, Yuichiro Matsushita2, Takeshi Ohshima3, Yasuto Hijikata1 (1.Saitama Univ., 2.The Univ. of Tokyo, 3.QST)

Keywords:silicon carbide, single photon source