The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)

Koji Kita(Univ. of Tokyo), Hiroaki Hanafusa(Hiroshima Univ.)

10:45 AM - 11:00 AM

[6a-A201-7] An electrical current test of SiC Schottky barrier diode with Mo2C electrode.

〇Daiki Saito1, Hiroshi Iwai2, Kazuo Tsutsui2, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Takuya Hoshii1, Iriya Muneta1 (1.Tokyo Tech Univ., 2.Tokyo Tech IIR.)

Keywords:Schottky barrier diode, SiC