[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-6] 400℃ operation of SiC n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating substrate

〇Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, JFET, ion implantation

SiC is an attractive material for devices operating under harsh environment. As for logic applications, considering the total energy loss, complementary logic ICs are desirable, which requires both n-type and p-type devices on a common substrate. In this study, n-channel and p-channel JFETs were fabricated by ion implantation into high-purity semi-insulating substrates and 400℃ operations of the JFETs were confirmed.