11:00 AM - 11:15 AM
△ [6a-A201-8] Design criterion for SiC BJTs to avoid negative effects of base spreading resistance on on-characteristics
Keywords:SiC bipolar junction transistor, Base spreading resistance, Parasitic diode
Presentation information
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)
Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)
Koji Kita(Univ. of Tokyo), Hiroaki Hanafusa(Hiroshima Univ.)