[5p-PB8-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[5p-PB8-7] Influence of negative gate bias on radiation response of SiC MOSFET

〇Akinori Takeyama¹, Takahiro Makino¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

Keywords:SiC, MOSFET, radiation response