[5p-PB8-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[5p-PB8-2] Molecular Dynamics Simulations for Constriction of Basal Plane Partial Dislocations and Conversion to Threading Edge Dislocation in 4H-SiC

〇Yohei Tamura¹, Hiroki Sakakima¹, So Takamoto¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Keywords:SiC, dislocation, molecular dynamics