Tetsuo Hatakeyama

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 9:00 AM - 11:45 AM A203 (203)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)

10:30 AM - 10:45 AM

[5a-A203-6] The Effect of Crystal Faces on the trap density in nitrided SiO₂/ SiC Interfaces Close to the Conduction Band Edge

〇Tetsuo Hatakeyama¹, Yuji kiuchi¹, Mitsuru Sometani¹, Dai Okamoto², Shinsuke Harada¹, Hiroshi Yano², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.Tukuba Univ.)