[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 5, 2017 9:00 AM - 11:45 AM A203 (203)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

9:00 AM - 9:15 AM

[5a-A203-1] First-Principles Molecular Dynamics Simulations of NO Oxynitridation in 4H-SiC/SiO₂
~Substitution Reaction between N and C at the Interface ~

〇Takahiro Yamasaki^1,2, Nobuo Tajima^1,2, Jun Nara^1,2, Tatsuo Schimizu³, Koichi Kato⁴, Takao Ohno^1,2 (1.NIMS, 2.MARCEED, 3.Toshiba R&D Center, 4.IIS, Univ. of Tokyo)

9:15 AM - 9:30 AM

[5a-A203-2] First-principles study on electronic structure of SiC/SiO₂after nitridization

〇TOMOYA ONO¹ (1.CCS, Univ. Tsukuba)

9:30 AM - 9:45 AM

[5a-A203-3] Evaluation of nitrogen depth profile at nitrided SiO₂/SiC interface using APT

〇Keiichi Yamada^1,2, Shinji Fujikake^1,3, Youhei Iwahashi¹, Shinsuke Harada¹, Hiroshi Yano⁴, Hajime Okumura¹ (1.AIST, 2.Toray Research Center, 3.Fuji Electric, 4.Univ. of Tsukuba)

9:45 AM - 10:00 AM

[5a-A203-4] Visualizing the distributions of interface states close to the conduction band by local deep level transient spectroscopy at low temperatures

〇Takayuki Abe¹, Yuji Yamagishi¹, Yasuo Cho¹ (1.RIEC, Tohoku univ.)

10:00 AM - 10:15 AM

▲ [5a-A203-5] Verification of density distribution of near-interface traps in 4H-SiC MOS capacitors with different oxide thicknesses

〇(D)Xufang Zhang¹, Dai Okamoto¹, Tetsuo Hatakeyama², Mitsuru Sometani², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Tsukuba Univ., 2.AIST)

10:30 AM - 10:45 AM

[5a-A203-6] The Effect of Crystal Faces on the trap density in nitrided SiO₂/ SiC Interfaces Close to the Conduction Band Edge

〇Tetsuo Hatakeyama¹, Yuji kiuchi¹, Mitsuru Sometani¹, Dai Okamoto², Shinsuke Harada¹, Hiroshi Yano², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.Tukuba Univ.)

10:45 AM - 11:00 AM

[5a-A203-7] Investigation on slow traps of 4H-SiC MOS capacitors based on the analysis of hysteresis of C-V characteristics observed byEvaluation of SiO₂/SiC interface deep states and near interface oxide traps by using photo illumination photo irradiation

〇Mizuki Nishida¹, Hirohisa Hirai¹, Koji Kita¹ (1.The Univ. of Tokyo)

11:00 AM - 11:15 AM

[5a-A203-8] Analysis of interface characteristics on p-type SiC MOS capacitors by conductance method

〇(M2)Yuki Karamoto¹, Xufang Zhang¹, Dai Okamoto¹, Mitsuru Sometani², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Tsukuba Univ., 2.AIST)

11:15 AM - 11:30 AM

[5a-A203-9] Experimental study on short channel effects in SiC MOSFETs

〇(M1)Keita Tachiki¹, Takahisa Ono¹, Takuma Kobayashi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

[5a-A203-10] Impact of measurement methods on threshold voltage shift under long term gate bias stress

〇Yuji Kiuchi^1,2, Mitsuru Sometani¹, Dai Okamoto³, Tetsuo Hatakeyama¹, Mitsuo Okamoto¹, Shinsuke Harada¹, Hiroshi Yano³, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.NJR, 3.Univ. Tsukuba)

Session information