11:00 AM - 11:15 AM
[5a-A203-8] Analysis of interface characteristics on p-type SiC MOS capacitors by conductance method
〇(M2)Yuki Karamoto1, Xufang Zhang1, Dai Okamoto1, Mitsuru Sometani2, Tetsuo Hatakeyama2, Shinsuke Harada2, Noriyuki Iwamuro1, Hiroshi Yano1 (1.Tsukuba Univ., 2.AIST)