Mizuki Nishida

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 9:00 AM - 11:45 AM A203 (203)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[5a-A203-1~10] 15.6 Group IV Compound Semiconductors (SiC)

10:45 AM - 11:00 AM

[5a-A203-7] Investigation on slow traps of 4H-SiC MOS capacitors based on the analysis of hysteresis of C-V characteristics observed byEvaluation of SiO₂/SiC interface deep states and near interface oxide traps by using photo illumination photo irradiation

〇Mizuki Nishida¹, Hirohisa Hirai¹, Koji Kita¹ (1.The Univ. of Tokyo)