The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[7a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 7, 2017 9:00 AM - 11:00 AM A201 (201)

Kazutoshi Kojima(AIST)

10:00 AM - 10:15 AM

[7a-A201-5] Low temperature formation of SiC thin film by chemical vapor deposition using vinylsilane precursor

Takuma Doi1, Wakana Takeuchi1, Yong Jin2, Hiroshi Kokubun2, Shigeo Yasuhara2, Osamu Nakatsuka1,3, Shigeaki Zaima3 (1.Nagoya Univ., 2.Japan Advanced Chemicals Ltd., 3.IMaSS, Nagoya Univ.)

Keywords:semiconductor, SiC