Takuma Doi

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 11:00 AM A201 (201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[7a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

10:00 AM - 10:15 AM

[7a-A201-5] Low temperature formation of SiC thin film by chemical vapor deposition using vinylsilane precursor

〇Takuma Doi¹, Wakana Takeuchi¹, Yong Jin², Hiroshi Kokubun², Shigeo Yasuhara², Osamu Nakatsuka^1,3, Shigeaki Zaima³ (1.Nagoya Univ., 2.Japan Advanced Chemicals Ltd., 3.IMaSS, Nagoya Univ.)

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