Electron mobility characterization of 4H-SiC(0001) junctionless MOSFET

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)

Koji Kita(Univ. of Tokyo), Hiroaki Hanafusa(Hiroshima Univ.)

9:45 AM - 10:00 AM

〇(M1)Hironori Takeda¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:SiC MOSFET, junctionless