[7a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[7a-A201-2] SiC Epitaxial Reactor Cleaning Using ClF₃ Gas and Pyrolytic Carbon-Coated Susceptor

Kohei Shioda¹, Keisuke Kurashima¹, 〇Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

Keywords:Silicon carbide, Cleaning, chlorine trifluoride

For improving the productivity of SiC epitaxial growth, a cleaning technique for removing the SiC film formed on the susceptor should be developed. In this study, the SiC film formed on the pyrolytic carbon film was removed using the chlorine trifluoride gas for developing the cleaning process.