[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-12] Relationship between seeding conditions and carbon concentration in solution growth of SiC by TSSG method

〇Toshinori Taishi^1,2, Masaru Takahashi², Naomichi Tsuchimoto², Koki Suzuki², Koangyong Hyun² (1.Shinshu Univ.(CEES), 2.Shinshu Univ.(Eng))

Keywords:Widegap semiconductor, Solution growth of SiC

Relationship between seeding condition, especially the duration until the seeding in the solution, and carbon concentration in the solution growth of SiC by the TSSG method is investigated. The crystal growth was carried out from Si-Cr based solution under various durations until the seeding, and the crystal quality was evaluated by Raman spectroscopy and optical microscope. The duration until saturation of carbon concentration in the solution was estimated based on the carbon solubility and dissolution rate of carbon from the crucible, and was discussed with the crystal quality.