[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-12] Development of Evaluation Method for Mechanical Stress Dependence of SiC Power Device by Electro-Thermal-Stress Coupled Analysis

〇Mitsuaki Kato¹, Akihiro Goryu¹, Akira Kano¹, Kazuto Takao¹, Kenji Hirohata¹, Satoshi Izumi² (1.Toshiba Corp., 2.Univ. of Tokyo)

Keywords:power device, piezoresistive effect, coupled analysis

The relationship between mechanical stress and on-resistance of the 4H-SiC device was analyzed by four-point bending test. As a result, the on-resistance was increased by 7% by applying a compressive stress of 1GPa. A power module was simulated by circuit simulator based on the experimental results. We confirmed that the module loss was increased by applying a compressive stress to the devices.