9:00 AM - 9:15 AM
〇Nozomu Iitsuka1, Ryu Hasunuma1 (1.Tsukuba Univ.)
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)
Koji Kita(Univ. of Tokyo), Hiroaki Hanafusa(Hiroshima Univ.)
△:奨励賞エントリー
▲:英語発表
▼:奨励賞エントリーかつ英語発表
空欄:どちらもなし
9:00 AM - 9:15 AM
〇Nozomu Iitsuka1, Ryu Hasunuma1 (1.Tsukuba Univ.)
9:15 AM - 9:30 AM
〇Hiroaki Kawamura1, Ryu Hasunuma1, Kikuo Yamabe1 (1.Tsukuba Univ.)
9:30 AM - 9:45 AM
〇Iimin Rei1, Takashi Kaneko1, Hitoshi Wakabayashi1, Kazuo Tsutsui2, Hiroshi Iwai2, Kuniyuki Kakushima1, Masayuki Huruhashi3, Shingo Tomohisha3, Satoshi Yamakawa3 (1.Tokyo Tech.FRC, 2.Tokyo Tech. IIR, 3.Mitsubishi Electric Corp)
9:45 AM - 10:00 AM
〇(M1)Hironori Takeda1, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1 (1.Osaka Univ.)
10:00 AM - 10:15 AM
〇(M2)Tatsuya Kurose1, Shin-Ichiro Kuroki1, Seiji Ishikawa2,1, Tomonori Maeda2,1, Hiroshi Sezaki2,1, Takahiro Makino3, Ohshima Takeshi3, Mikael Ostling4, Carl-Mikael Zetterling4 (1.Hiroshima Univ. RNBS, 2.Phenitec Co.,Ltd, 3.QST, 4.KTH Royal Institute of technology)
10:15 AM - 10:30 AM
〇Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
10:45 AM - 11:00 AM
〇Daiki Saito1, Hiroshi Iwai2, Kazuo Tsutsui2, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Takuya Hoshii1, Iriya Muneta1 (1.Tokyo Tech Univ., 2.Tokyo Tech IIR.)
11:00 AM - 11:15 AM
〇Satoshi Asada1, Jun Suda1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
11:15 AM - 11:30 AM
〇(M1)XILUN CHI1, Hiroki Niwa1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
11:30 AM - 11:45 AM
〇(M2)Tomohiro Tsuchiya1, Akira Suwa2, Akihiro Ikeda1, Daisuke Nakamura1, Tanemasa Asano1, Hiroshi Ikenoue1,2 (1.Grad. Sch. ISEE. Kyushu Univ., 2.Gigaphoton Next GLP, Kyushu Univ.)
11:45 AM - 12:00 PM
〇Kenji Teramoto1, Hiroaki Hanahusa1, Seiichiro Higashi1 (1.Hiroshima Univ.)
12:00 PM - 12:15 PM
〇Mitsuaki Kato1, Akihiro Goryu1, Akira Kano1, Kazuto Takao1, Kenji Hirohata1, Satoshi Izumi2 (1.Toshiba Corp., 2.Univ. of Tokyo)
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