[6a-A202-1~10] 6.3 Oxide electronics

[6a-A202-1] Magnetotransport properties of compressive strained Eu_1-xLa_xTiO₃ films on LSAT substrates

〇KEI S TAKAHASHI^1,2, Tomoki Murata³, Qing-Yan Wang¹, Kazuki Maruhashi³, Yoshinori Tokura^1,3, Masashi Kawasaki^1,3 (1.RIKEN CEMS, 2.JST, PREST, 3.Univ. of Tokyo)

Keywords:magnetic semiconductor, anomalous Hall effect

We have reported that an additional Hall effect besides normal and anomalous Hall effect can be observed in compressive strained La doped EuTiO₃ films. Recently, such Hall effect which is not proprtional to magnetic field and magnetization was found in various magnetic materials and the understanding of the origin of the additional Hall effect has been dramatically developed. In this occation, it is worth discussing the transport properties of La doped EuTiO₃ films in a comprehensive way.