[6a-A202-1~10] 6.3 Oxide electronics

△ [6a-A202-2] Fabrication and magnetotransport properties of high mobility EuTiO₃ quantum wells

〇Kazuki Maruhashi¹, Kei Takahashi^2,3, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Dept. of Appl. Phys., Univ. of Tokyo, 2.RIKEN CEMS, 3.JST, PREST)

Keywords:magnetic semiconductor, anomalous Hall effect

We fabricated quantum well structures composed of magnetic semiconductor EuTiO₃ and SrTiO₃ layers on (001) SrTiO₃ substrates by metal-organic molecular beam epitaxy. The maximum electron mobility reaches 2,000 cm²/Vs. This is one order of magnitude higher than that of La doped EuTiO₃ thin films on (001) LSAT substrate previously reported. Accordingly, we successfully observed SdH oscillations in EuTiO₃ system for the first time. Moreover, we observed fine structures of magnetoresistance and anomalous Hall effect which could not be found in low mobility films.