[6a-A203-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [6a-A203-8] Observation of light emission phenomenon in oxide thin film transistors

〇(D)Kahori Kise¹, Mami Fujii¹, Juan Paolo Bermundo¹, Yasuaki Ishijawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:TAOS, Emission analysis, TFT

In recent years, transparent amorphous oxide semiconductor (TAOS) typified by amorphous InGaZnO (a-IGZO) has been investigated as a promising material for next-generation flexible displays because of its transparency, low-temperature fabrication process and high electron mobility. However, fabrication of flexible displays based on TFTs faces challenges such as the lack of reliability of electrical properties. In order to ensure long-term reliability of TAOS-TFT, it is indispensable to elucidate the degradation mechanism. In the previous studies, their results suggesting impact ionization phenomenon have been obtained as a factor of deterioration of TAOS-TFT. However, there have been no reports that clearly captured this phenomenon. In this study, we report emission phenomena in a-IGZO TFT which is considered to be related to impact ions.