9:00 AM - 9:15 AM
〇Keisuke Ide1, Yosuke Kishida1, Takayoshi Katase1, Hidenori Hiramatsu1,2, Shigenori Ueda3, Hideya Kumomi2, Hideo Hosono1,2, Toshio Kamiya1,2 (1.MSL, Tokyo Tech., 2.MCES, Tokyo Tech., 3.NIMS)
Oral presentation
21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Wed. Sep 6, 2017 9:00 AM - 11:45 AM A203 (203)
Mamoru Furuta(Kochi Univ. of Tech.)
△:奨励賞エントリー
▲:英語発表
▼:奨励賞エントリーかつ英語発表
空欄:どちらもなし
9:00 AM - 9:15 AM
〇Keisuke Ide1, Yosuke Kishida1, Takayoshi Katase1, Hidenori Hiramatsu1,2, Shigenori Ueda3, Hideya Kumomi2, Hideo Hosono1,2, Toshio Kamiya1,2 (1.MSL, Tokyo Tech., 2.MCES, Tokyo Tech., 3.NIMS)
9:15 AM - 9:30 AM
〇Junjun Jia1, Toshihiro Okajima2, Yuzo Shigesato1 (1.Aoyama Gakuin Univ., 2.Kyushu Synchrotron Light Research Center)
9:30 AM - 9:45 AM
〇(M2)Yusuke Ochiai1, Takaaki Morimoto1, Nobuko Fukuda3, Yoshimichi Ohki1,2 (1.GSASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)
9:45 AM - 10:00 AM
〇(M1)Yuki Takamori1, Takaaki Morimoto1, Nobuko Fukuda3, Yoshimichi Ohki1,2 (1.SASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)
10:00 AM - 10:15 AM
〇Kazushige Takechi1, Hiroshi Tanabe1 (1.NLT Technologies)
10:30 AM - 10:45 AM
〇Makoto Nakazumi1, Yasutaka Nishi1, Koichiro Iwahori1 (1.Nikon)
10:45 AM - 11:00 AM
〇(D)Kazunori Kurishima1,2, Toshihide Nabatame2, Takashi Onaya1,2, Takio Kizu2, Kazuhito Tsukagoshi2, Akihiko Ohi2, Naoki Ikeda2, Toyohiro Chikyow2, Atsushi Ogura1 (1.Meiji Univ., 2.NIMS)
11:00 AM - 11:15 AM
〇(D)Kahori Kise1, Mami Fujii1, Juan Paolo Bermundo1, Yasuaki Ishijawa1, Yukiharu Uraoka1 (1.NAIST)
11:15 AM - 11:30 AM
〇Koki Nagayama1, Oliver Kaltstein1, Sohei Matsuda1, Kazuyori Oura1, Masatoshi Koyama1, Toshihiko Maemoto1, Shigehiko Sasa1 (1.Osaka Inst. of Tech. NMRC)
11:30 AM - 11:45 AM
〇Kimihiko Kato1, Hiroaki Matsui1, Hitoshi Tabata1, Mitsuru Takenaka1, Shinichi Takagi1 (1.Univ. of Tokyo)
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