[6a-A301-1~11] 15.4 III-V-group nitride crystals

[6a-A301-3] Growth condition dependence of selective area growth with wide open window mask for growth of GaN by hydride vapor phase epitaxy

〇Hiroki Ikeuchi¹, Naoto Ishibashi¹, Kota Yukizane¹, Tatsuya Ezaki¹, Kohei Nojima¹, Satoru Fujimoto¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)

Keywords:GaN, Hydride vapor phase epitaxy