Hiroki Ikeuchi

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[6a-A301-1~11] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM

[6a-A301-3] Growth condition dependence of selective area growth with wide open window mask for growth of GaN by hydride vapor phase epitaxy

〇Hiroki Ikeuchi¹, Naoto Ishibashi¹, Kota Yukizane¹, Tatsuya Ezaki¹, Kohei Nojima¹, Satoru Fujimoto¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)

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