[6a-A301-1~11] 15.4 III-V-group nitride crystals

Wed. Sep 6, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Narihito Okada(Yamaguchi Univ.), Hisashi Murakami(TUAT)

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9:00 AM - 9:15 AM

[6a-A301-1] Demonstration of wafer processing from GaN crystal prepared with a tiling technique

〇Takehiro Yoshida¹, Toshio Kitamura¹, Kenji Otaka¹, Masatomo Shibata¹ (1.Sciocs, Co. Ltd.)

9:15 AM - 9:30 AM

[6a-A301-2] Facet growth of GaN with Ga,N double polarities by Hydride Vapor Phase Epitaxy

〇Tatsuya Ezaki¹, Yusuke Shigefuji², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 2.Yamaguchi Univ.)

9:30 AM - 9:45 AM

[6a-A301-3] Growth condition dependence of selective area growth with wide open window mask for growth of GaN by hydride vapor phase epitaxy

〇Hiroki Ikeuchi¹, Naoto Ishibashi¹, Kota Yukizane¹, Tatsuya Ezaki¹, Kohei Nojima¹, Satoru Fujimoto¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ.)

9:45 AM - 10:00 AM

[6a-A301-4] Suppression of parasitic deposition for thick-GaN growth by Oxide Vapor Phase Epitaxy

〇Yoshikazu Gunji¹, Yohei Yamaguchi¹, Keiju Ishibashi¹, Shintaro Tsuno¹, Akira Kitamoto¹, Masayuki Imanishi¹, Masashi Yoshimura¹, Mamoru Imade¹, Masashi Isemura², Yusuke Mori¹ (1.Osaka Univ., 2.Itochu Plastics)

10:00 AM - 10:15 AM

[6a-A301-5] Growth of thick semi-polar GaN crystal to improve crystalinity by Na-flux method.

〇(M2)Ryusei Kuramoto¹, DoHun Kim¹, Takumi Yamada¹, Kosuke Murakami¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

10:15 AM - 10:30 AM

△ [6a-A301-6] Effects of the PS-GaN square on the bowing of GaN wafer fabricated using the sapphire dissolution technique in the Na-flux growth

〇(D)Takumi Yamada¹, Kosuke Murakami¹, Kosuke Nakamura¹, Tomoko Kitamura¹, Keisuke Kakinouchi¹, Kanako Okumura¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

[6a-A301-7] [JSAP Young Scientist Award Speech] Propagation Properties of Threading Dislocations in HVPE-grown GaN Observed by Two-Photon-Excitation Photoluminescence

〇Tomoyuki Tanikawa¹, Kazuki Ohnishi¹, Masaya Kanoh², Takashi Mukai², Takashi Matsuoka¹ (1.IMR, Tohoku Univ., 2.Nichia Corp.)

11:00 AM - 11:15 AM

△ [6a-A301-8] Evaluation of Threading Dislocation Densities in HVPE-Grown AlN Substrates by Wet Chemical Etching

〇Mari Higuchi¹, Taro Mitsui¹, Toru Nagashima², Reo Yamamoto^1,2, Keita Konishi¹, Galia Pozina³, Rafael Dalmau⁴, Raoul Schlesser⁴, Ramon Collazo⁵, Bo Monemar^3,6, Zlatko Sitar⁵, Yoshinao Kumagai^1,6 (1.TUAT, 2.Tokuyama Corp., 3.Linkoping Univ., 4.HexaTech, Inc., 5.NC State Univ., 6.TUAT GIR)

11:15 AM - 11:30 AM

[6a-A301-9] Origin of inversion domains in aluminum nitride grown by sublimation method

〇Keisuke Shigetoh¹, Kayo Horibuchi¹, Daisuke Nakamura¹ (1.Toyota CRDL)

11:30 AM - 11:45 AM

[6a-A301-10] Influence of Ambient Oxygen on Si Incorporation during High Temperature HVPE of AlN

〇Keita Konishi¹, Reo Yamamoto^1,2, Rie Togashi^1,3, Toru Nagashima², Toru Kinoshita², Rafael Dalmau⁴, Raoul Schlesser⁴, Hisashi Murakami^1,3, Ramon Collazo⁵, Bo Monemar^3,6, Zlatko Sitar⁵, Yoshinao Kumagai^1,3 (1.TUAT, 2.Tokuyama Corporation, 3.TUAT GIR, 4.HexaTech, Inc., 5.NC State Univ., 6.Linkoping Univ.)

11:45 AM - 12:00 PM

△ [6a-A301-11] Preparation of high-quality a-plane AlN on r-plane sapphire using sputtering method

〇Ryo Fukuta¹, Yamaki Yuta¹, Hayashi Yusuke^1,2, Miyake Hideto^1,2, Hiramatsu Kazumasa¹ (1.Mie Univ Grad.School of Engineering, 2.Mie Univ Grad. School of Regional Innovation Studies)

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