Ryusei Kuramoto

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[6a-A301-1~11] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM

[6a-A301-5] Growth of thick semi-polar GaN crystal to improve crystalinity by Na-flux method.

〇(M2)Ryusei Kuramoto¹, DoHun Kim¹, Takumi Yamada¹, Kosuke Murakami¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

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