Keita Konishi

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[6a-A301-1~11] 15.4 III-V-group nitride crystals

11:30 AM - 11:45 AM

[6a-A301-10] Influence of Ambient Oxygen on Si Incorporation during High Temperature HVPE of AlN

〇Keita Konishi¹, Reo Yamamoto^1,2, Rie Togashi^1,3, Toru Nagashima², Toru Kinoshita², Rafael Dalmau⁴, Raoul Schlesser⁴, Hisashi Murakami^1,3, Ramon Collazo⁵, Bo Monemar^3,6, Zlatko Sitar⁵, Yoshinao Kumagai^1,3 (1.TUAT, 2.Tokuyama Corporation, 3.TUAT GIR, 4.HexaTech, Inc., 5.NC State Univ., 6.Linkoping Univ.)

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM

△ [7p-C17-4] Comparison of β-Ga₂O₃ Homoepitaxial Growth by Halide Vapor Phase EpitaxyUsing Different Oxygen Sources

〇Keita Konishi¹, Ken Goto^2,1, Rie Togashi^1,3, Hisashi Murakami^1,3, Masataka Higashiwaki⁴, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^3,5, Yoshinao Kumagai^1,3 (1.TUAT, 2.Tamura Corporation, 3.TUAT GIR, 4.NICT, 5.Linkoping Univ.)

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