[6a-A301-1~11] 15.4 III-V-group nitride crystals

△ [6a-A301-6] Effects of the PS-GaN square on the bowing of GaN wafer fabricated using the sapphire dissolution technique in the Na-flux growth

〇(D)Takumi Yamada¹, Kosuke Murakami¹, Kosuke Nakamura¹, Tomoko Kitamura¹, Keisuke Kakinouchi¹, Kanako Okumura¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

Keywords:Na-flux method, Gallium Nitride