Single Step ICP (Inductively Coupled Plasmas) Dry-Etching Condition for Lateral <em>pin</em> Waveguide

Yuto Morita; Haisong Jiang; Kiich Hamamoto

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[6a-C14-1~14] 3.13 Semiconductor optical devices

3.13と3.15のコードシェアセッションあり

Wed. Sep 6, 2017 9:00 AM - 12:45 PM C14 (office 3-1)

Takeo Maruyama(Kanazawa Univ.), Tomoyuki Miyamoto(Titech)

9:00 AM - 9:15 AM

[6a-C14-1] Single Step ICP (Inductively Coupled Plasmas) Dry-Etching Condition for Lateral pin Waveguide

〇Yuto Morita¹, Haisong Jiang¹, Kiich Hamamoto¹ (1.Kyushu Univ.)

Keywords:PIN structure, RIE-lag effect, Trench structure

RIE lag phenomenon in inductively coupled plasmas was investigated to realize lateral pin waveguide with single step dry-etching. More than 10% etching speed reduction has been confirmed at an open space of 0.8μm, compared to the case of open space of 5μm clearly under ICP bias power (ion acceleration power) of 100W.