[6a-C14-1~14] 3.13 Semiconductor optical devices

[6a-C14-2] The Effect of Ion Valance on Quantum Dot Intermixing Using Ion Implantation

〇Shine Matsui¹, Yota Akashi¹, Shohei Isawa¹, Atsushi Matsumoto², Koichi Akahane², Yuichi Matsushima³, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT, 3.Waseda Univ. GCS)

Keywords:Quantum dot, Intermixing, Ion implantation

Quantum dot intermixing(QDI) using ion implantation is widely studied as an monolithical integration technique for quantum dot(QD). We had confirmed maximum 190 nm shift of photoluminescence peak after our QDI technique. To achieve controlable and larger wavelength shift is an important issue considering QDI application on active photonic devices. In this paper, we report the effect of ion valance on QDI using ion implantation.