[6a-C16-1~9] 17.3 Layered materials

[6a-C16-8] Position controlled growth of atomic-layer chalcogenide by using patterned Si substrates

〇Toshifumi Irisawa¹, Naoya Okada¹, Wataru Mizubayashi¹, Kazuhiko Endo¹, Takahiro Mori¹, Atsushi Ando¹, Syougo Sasaki², Naohiko Endo², Yasumitsu Miyata² (1.AIST, 2.Tokyo Metropolitan Univ.)

Keywords:chalcogenide, Chemical vapor deposition, atomic-layer