[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

[6a-C17-1] [JSAP Paper Award Speech] 1.8mΩ・cm² vertical GaN-based trench metal–oxide–semiconductor field-effect transistors
on a free-standing GaN substrate for 1.2-kV-class operation

〇Tohru Oka¹, Tsutomu Ina¹, Yukihisa Ueno¹, Junya Nishii¹ (1.Toyoda Gosei)

Keywords:JSAP Paper Award Speech