The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

Wed. Sep 6, 2017 9:00 AM - 11:30 AM C17 (Training Room 2)

Seiji Nakamura(TMU)

9:00 AM - 9:30 AM

[6a-C17-1] [JSAP Paper Award Speech] 1.8mΩ・cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors
on a free-standing GaN substrate for 1.2-kV-class operation

Tohru Oka1, Tsutomu Ina1, Yukihisa Ueno1, Junya Nishii1 (1.Toyoda Gosei)

Keywords:JSAP Paper Award Speech