[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

[6a-C17-4] Evaluation of crystal damage in Mg-implanted GaN by RBS

〇Kazue Shingu¹, Kazuteru Takahashi¹, Daniel Tseng², Tohru Nakamura³, Kiyoji Ikeda³, Tomoaki Nishimura³, Tomoyoshi Mishima³ (1.Nano Science, 2.EAG, 3.Hosei Univ.)

Keywords:GaN, Implantation, RBS

Mg ion implanted GaN crystal samples with various implanted condition before and after annealing were measured by Rutherford Backscattering Spectrometry (RBS). Some damage were detected in as-implanted GaN and recovery of damage was seen in annealed GaN. The amount of GaN crystal damage was evaluated using amount of Ga displacement.