[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

[6a-C17-5] Evaluation of crystal damage in Mg-implanted GaN by TEM

〇Kazuteru Takahashi¹, Kazue Shingu¹, Udit Sharma², Toru Nakamura³, Kiyoji Ikeda³, Nishimura Tomoaki³, Tomoyoshi Mishima³ (1.Nano Science Corp., 2.EAG, Inc., 3.Hosei Univ.)

Keywords:GaN, Ion implantation, TEM

We investigated crystalinity GaN substrate which implanted Mg with several conditions. We found Mg localization in high dose sample.