Killer dislocation analysis of PN diodes on free-standing GaN substrates with different dislocation densities

Shigeyoshi Usami; Hayata Fukushima; Yuto Ando; Atsushi Tanaka; Kentaro Nagamatsu; Maki Kushimoto; Manato Deki; Shugo Nitta; Yoshio Honda; Hiroshi Amano

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

Wed. Sep 6, 2017 9:00 AM - 11:30 AM C17 (Training Room 2)

Seiji Nakamura(TMU)

10:45 AM - 11:00 AM

△ [6a-C17-6] Killer dislocation analysis of PN diodes on free-standing GaN substrates with different dislocation densities

〇Shigeyoshi Usami¹, Hayata Fukushima¹, Yuto Ando¹, Atsushi Tanaka^2,3, Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

Keywords:pn diodes, dislocations, reverse leakage