[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

[6a-C17-7] High Sensitivity Observation of Dopant Concentration in GaN semiconductor by Phase-Shifting Electron Holography

〇Kiyotaka Nakano¹, Miko Matsumoto¹, Satoshi Anada¹, Kazuo Yamamoto¹, Yuto Ando², Masaya Ogura², Si-Young Bae², Atsushi Tanaka², Yoshio Honda², Yukari Ishikawa¹, Hiroshi Amano², Tsukasa Hirayama¹ (1.JFCC, 2.Nagoya Univ.)

Keywords:Electron Holography, Nitride semiconductor