10:15 〜 10:30
▲ [6a-C19-3] Development of Nanoscale Electronic Device of Random Single-Walled Carbon Nanotubes Network Adsorbed with SV2W10O40[H4t-BuTPP]
キーワード：single-walled carbon nanotubes, SV2W10O40[H4t-BuTPP], polyooxometalate
Future advancement computing technology of molecular electronics is still remaining big challenges to obtain high-quality devices assembled by using nanometer-sized wiring[1]. For this purpose, a single-walled carbon nanotube (SWNT) and originally synthesized POM, SV2W10O40[H4t-BuTPP], has been demonstrated. The electrical properties of this complex were also investigated by identifying noise and fluctuation of pulse generation to increase high performance in information processing of brain-like computing[2].
Firstly, we fabricated a random network of SWNT complex by using SV2W10O40[H4t-BuTPP] as shown in Fig. 1(a). In SV2W10O40[H4t-BuTPP], POM is surrounded by four porphyrins to improve interaction between SWNT and POM for adsorption (Fig. 1(b)). Measurement of time dependence of current pass through the network has been performed (Fig.1(c)). The results showed pulse current were generated under certain conditions.
Here, we tried to control the spikes by optimizing the SWNT/POM ratio in the network and applied bias voltage. Finally, we found the network of SV2W10O40[H4t-BuTPP] and SWNT complex can generate pulse current over 75 V (Fig.1(c)). The analyzed results by return map in Fig. 1(d) showed the pulse interval at 75 V was smaller than 50 V and 100 V. Hereafter, we also are going to try controlling ratio dependence of SWNT/POM network which may affected to the spikes generation phenomena.
Firstly, we fabricated a random network of SWNT complex by using SV2W10O40[H4t-BuTPP] as shown in Fig. 1(a). In SV2W10O40[H4t-BuTPP], POM is surrounded by four porphyrins to improve interaction between SWNT and POM for adsorption (Fig. 1(b)). Measurement of time dependence of current pass through the network has been performed (Fig.1(c)). The results showed pulse current were generated under certain conditions.
Here, we tried to control the spikes by optimizing the SWNT/POM ratio in the network and applied bias voltage. Finally, we found the network of SV2W10O40[H4t-BuTPP] and SWNT complex can generate pulse current over 75 V (Fig.1(c)). The analyzed results by return map in Fig. 1(d) showed the pulse interval at 75 V was smaller than 50 V and 100 V. Hereafter, we also are going to try controlling ratio dependence of SWNT/POM network which may affected to the spikes generation phenomena.