The 78th JSAP Autumn Meeting, 2017

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13 Semiconductors » 13.3 Insulator technology

[6a-PA9-1~11] 13.3 Insulator technology

Wed. Sep 6, 2017 9:30 AM - 11:30 AM PA9 (P)

9:30 AM - 11:30 AM

[6a-PA9-1] Formation and characterization of Al2O3 films by ALD directly on epitaxial Ge

〇(M1)eriko shigesawa1, Sano Ryosuke1, Ikegami Kazuhiko1, Sawano Kentaro1, Nohira Hiroshi1 (1.Tokyo City Univ.)

Keywords:Ge, ALD