〇Yoshihide Yamaguchi¹, Kazunori Shinoda¹, Yutaka Kouzuma², Satoshi Sakai², Masaru Izawa² (1.Hitachi. Ltd. R&D group, 2.Hitachi High-Technologies Corporation)

11:15 AM - 11:30 AM

[5a-C11-9] A study on high-k HfN film formation utilizing ECR-N₂ plasma nitridation

〇Shin Ishimatsu¹, Rengie Mark Mailig¹, Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Inst.)

11:30 AM - 11:45 AM

[5a-C11-10] Fabrication and Evaluation of HfO₂/Si Structure by Chemical Oxidation Method on Metal Hf/Si Structure

〇Hiroki Oba¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Tokyo Univ. of Agri. & Tech.)

11:45 AM - 12:00 PM

[5a-C11-11] First-principles calculation of leakage current caused by oxygen vacancy at HfO₂/SiO₂

〇Kensuke Takagi¹, Tomoya Ono^1,2 (1.Univ. of Tsukuba, 2.CCS, Univ. of Tsukuba)

Oral presentation

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Tue. Sep 5, 2017 1:45 PM - 4:30 PM C11 (Office 1)

Masao Inoue(Renesas), Takanobu Watanabe(Waseda Univ.)

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1:45 PM - 2:00 PM

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al₂O₃ films by crystallizing high-temperature annealing

〇(B)Kiyotaka Horikawa¹, Satoshi Okubo¹, Taisuke Kageura¹, Atsushi Hiraiwa^2,3,4, Hiroshi Kawarada^1,2,3 (1.Waseda Univ., 2.Zairean, 3.NTRC, 4.Nagoya Univ.)

2:00 PM - 2:15 PM

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al₂O₃/SiO₂ interface
-Impacts of chemical composition abruptness at the interface-

〇Hironobu Kamata¹, Koji Kita¹ (1.The Univ. of Tokyo)

2:15 PM - 2:30 PM

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al₂O₃/SiO₂ interface

〇(M1)Siri Nittayakasetwat¹, Hironobu Kamata¹, Koji Kita¹ (1.The Univ. of Tokyo)

2:30 PM - 2:45 PM

[5p-C11-4] Correlation between Electrical Dipole Moment and Ratio of Oxygen Density at High-k Dielectric/SiO₂ Interface as Evaluated by XPS

〇Nobuyuki Fujimura¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

3:00 PM - 3:15 PM

[5p-C11-5] Surface roughness increase induced by step etching of SiO₂ film on Si

〇(M1)Takumi Agatuma¹ (1.Univ. of Tsukuba)

3:15 PM - 3:30 PM

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTi_xMg_1-xO_3-δ Catalyst

〇(D)HsiangFang Sun¹, Akihiro Ikeda¹, Tanemasa Asano¹ (1.Kyushu Univ.)

3:30 PM - 3:45 PM

[5p-C11-7] Defect Profiling of RTN Traps under High Electric Fields ~ Theoretical Extrapolation Based on Non-radiative Multiphonon Transition ~

〇Michiru Hogyoku¹, Takashi Izumida¹, Seiji Onoue¹ (1.Toshiba Memory Corp.)

3:45 PM - 4:00 PM

[5p-C11-8] Charge De-trapping in SiN characterized by KFM

〇Koudai Ozawa¹, Ryu Hasunuma¹ (1.Tsukuba Univ.)

4:00 PM - 4:15 PM

[5p-C11-9] Theoretical study on interface orientation dependence of Si thermal oxidation based on Si emission model

〇Takuya Nagura¹, Shingo Kawachi¹, Kenta Chokawa¹, Hiroki Shirakawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Interdisciplinary Graduate School of Science and Engineering, Shimane Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.CIES, Tohoku Univ., 6.JST-ACCEL)

4:15 PM - 4:30 PM

[5p-C11-10] Chemical Trends of Metal Species in Amorphous-SiO₂

〇Takeshi Miyajima¹, Hiroki Shirakawa¹, Masaaki Araidai^2,1, Kenji Shiraishi^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Poster presentation

[6a-PA9-1~11] 13.3 Insulator technology

Wed. Sep 6, 2017 9:30 AM - 11:30 AM PA9 (P)

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9:30 AM - 11:30 AM

[6a-PA9-1] Formation and characterization of Al₂O₃ films by ALD directly on epitaxial Ge

〇(M1)eriko shigesawa¹, Sano Ryosuke¹, Ikegami Kazuhiko¹, Sawano Kentaro¹, Nohira Hiroshi¹ (1.Tokyo City Univ.)

9:30 AM - 11:30 AM

[6a-PA9-2] Effects of oxygen radical irradiation on the interface property of Al₂O₃/p-Ge grown by Atomic Layer Deposition

〇Daichi Yamada¹, Yohei Otani¹, Chiaya Yamamoto², Junji Yamanaka², Tetsuya Sato², Hiroshi Okamoto³, Yukio Fukuda¹ (1.Tokyo Univ. of sci.,Suwa, 2.Univ. of Yamanashi, 3.Hirosaki Univ.)

9:30 AM - 11:30 AM

[6a-PA9-3] Effects of gate-electrode metals on the electrical properties of Al₂O₃/GeO₂/p-Ge MOS capacitor grown by REALD -2

〇(M1)Yu Nagahama¹, Daichi Yamada², Yohei Otani², Yukio Fukuda², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tokyo Univ. of Science)

9:30 AM - 11:30 AM

[6a-PA9-4] Trichloroethene Effect on Redaction in Residual OH Content in Low-Temperature Si Oxide Films Produced by APCVD with Organic Silicon Gas Source

〇Susumu Horita¹, Jain Puneet¹ (1.Japan Adv. Ins. Sci & Tech.)

9:30 AM - 11:30 AM

[6a-PA9-5] Investigation of Driving Force for Dipole Layer Formation at AlO_xN_y/SiO₂ Interface by MD Simulation

〇Okuto Takahashi¹, Nobuhiro Nakagawa¹, Motohiro Tomita¹, Takanobu Watanabe¹ (1.Waseda Univ.)

9:30 AM - 11:30 AM

[6a-PA9-6] Step coverage of hafnium oxide thin films by supercritical fluid deposition

〇Hiroaki Kawashima¹, Hiroshi Uchida¹ (1.Sophia Univ.)

9:30 AM - 11:30 AM

△ [6a-PA9-7] Interface state generation in Al₂O₃/InGaAs MOS structures by electrical stress

〇SANghee YOON¹, Chih-Yu Chang¹, Dae-Hwan Ahn¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The University of Tokyo)

9:30 AM - 11:30 AM

[6a-PA9-8] Hole trapping characteristics of silicon carbonitride films for charge trapping memory applications

〇Hiroshi Mino¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

[6a-PA9-9] Thermal annealing effect on paramagnetic defects in silicon nitride films(Ⅴ)

〇(M1)Kenya Niisato¹, Osamu Kazumi¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

[6a-PA9-10] Surface Oxidation process of SiO_x films under humid environment

〇Tomoki Oku¹, Toshihiko Shiga¹, Masahiro Totsuka¹, Shinichi Takagi¹ (1.Mitsubishi Electric)

9:30 AM - 11:30 AM

[6a-PA9-11] Fluctuation of self-diffusion coefficient on high-temperature SiO₂ and SiO₂ + SiO

〇Yuji Yajima¹, Kenji Shiraishi^2,3, Tetsuo Endoh^2,4, Hiroyuki Kageshima^1,2 (1.Shimane Univ., 2.JST-ACCEL, 3.Nagoya Univ., 4.Tohoku Univ.)

Sessions

13 Semiconductors » 13.3 Insulator technology

[5a-C11-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

[5a-C11-1] A study of Kr/O₂ plasma treatment in GeO₂/Ge structures

[5a-C11-2] A Study for Improvement of GeO₂ Water Absorbency by plasma Nitridization Treatment

▼ [5a-C11-3] Near-interface border traps characterization for GeO₂/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy

[5a-C11-4] The effect of Post Metallization Annealing for GeO2/Ge structures using CVD method

[5a-C11-5] Characteristic change of GeO ₂ / Ge interface by Hf-Post Matallization Annealing

[5a-C11-6] A study of fabrication condition of GeO₂layer in HfO₂/GeO₂/Ge structure

▼ [5a-C11-7] Study on physical origins of slow traps for electrons and holes in ALD Al₂O₃/GeO_x/Ge interfaces

[5a-C11-8] Thermal Dry Etching Method for Lanthanum Oxide by using Surface Modification with Organometallic Complex

[5a-C11-9] A study on high-k HfN film formation utilizing ECR-N₂ plasma nitridation

[5a-C11-10] Fabrication and Evaluation of HfO₂/Si Structure by Chemical Oxidation Method on Metal Hf/Si Structure

[5a-C11-11] First-principles calculation of leakage current caused by oxygen vacancy at HfO₂/SiO₂

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al₂O₃ films by crystallizing high-temperature annealing

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al₂O₃/SiO₂ interface
-Impacts of chemical composition abruptness at the interface-

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al₂O₃/SiO₂ interface

[5p-C11-4] Correlation between Electrical Dipole Moment and Ratio of Oxygen Density at High-k Dielectric/SiO₂ Interface as Evaluated by XPS

[5p-C11-5] Surface roughness increase induced by step etching of SiO₂ film on Si

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTi_xMg_1-xO_3-δ Catalyst

[5p-C11-7] Defect Profiling of RTN Traps under High Electric Fields ~ Theoretical Extrapolation Based on Non-radiative Multiphonon Transition ~

[5p-C11-8] Charge De-trapping in SiN characterized by KFM

[5p-C11-9] Theoretical study on interface orientation dependence of Si thermal oxidation based on Si emission model

[5p-C11-10] Chemical Trends of Metal Species in Amorphous-SiO₂

[6a-PA9-1~11] 13.3 Insulator technology

[6a-PA9-1] Formation and characterization of Al₂O₃ films by ALD directly on epitaxial Ge

[6a-PA9-2] Effects of oxygen radical irradiation on the interface property of Al₂O₃/p-Ge grown by Atomic Layer Deposition

[6a-PA9-3] Effects of gate-electrode metals on the electrical properties of Al₂O₃/GeO₂/p-Ge MOS capacitor grown by REALD -2

[6a-PA9-4] Trichloroethene Effect on Redaction in Residual OH Content in Low-Temperature Si Oxide Films Produced by APCVD with Organic Silicon Gas Source

[6a-PA9-5] Investigation of Driving Force for Dipole Layer Formation at AlO_xN_y/SiO₂ Interface by MD Simulation

[6a-PA9-6] Step coverage of hafnium oxide thin films by supercritical fluid deposition

△ [6a-PA9-7] Interface state generation in Al₂O₃/InGaAs MOS structures by electrical stress

[6a-PA9-8] Hole trapping characteristics of silicon carbonitride films for charge trapping memory applications

[6a-PA9-9] Thermal annealing effect on paramagnetic defects in silicon nitride films(Ⅴ)

[6a-PA9-10] Surface Oxidation process of SiO_x films under humid environment

[6a-PA9-11] Fluctuation of self-diffusion coefficient on high-temperature SiO₂ and SiO₂ + SiO

Authentication

Sessions

13 Semiconductors » 13.3 Insulator technology

[5a-C11-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

▼ [5a-C11-3] Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy

▼ [5a-C11-7] Study on physical origins of slow traps for electrons and holes in ALD Al2O3/GeOx/Ge interfaces

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al2O3 films by crystallizing high-temperature annealing

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al2O3/SiO2 interface-Impacts of chemical composition abruptness at the interface-

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al2O3/SiO2 interface

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTixMg1-xO3-δ Catalyst

[6a-PA9-1~11] 13.3 Insulator technology

△ [6a-PA9-7] Interface state generation in Al2O3/InGaAs MOS structures by electrical stress

Authentication

▼ [5a-C11-3] Near-interface border traps characterization for GeO₂/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy

▼ [5a-C11-7] Study on physical origins of slow traps for electrons and holes in ALD Al₂O₃/GeO_x/Ge interfaces

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al₂O₃ films by crystallizing high-temperature annealing

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al₂O₃/SiO₂ interface
-Impacts of chemical composition abruptness at the interface-

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al₂O₃/SiO₂ interface

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTi_xMg_1-xO_3-δ Catalyst

△ [6a-PA9-7] Interface state generation in Al₂O₃/InGaAs MOS structures by electrical stress