The 78th JSAP Autumn Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[6a-PA9-1~11] 13.3 Insulator technology

Wed. Sep 6, 2017 9:30 AM - 11:30 AM PA9 (P)

9:30 AM - 11:30 AM

[6a-PA9-10] Surface Oxidation process of SiOx films under humid environment

Tomoki Oku1, Toshihiko Shiga1, Masahiro Totsuka1, Shinichi Takagi1 (1.Mitsubishi Electric)

Keywords:humid resistance, silicon oxide, hydrolysis

The SiNx films oxidized under high humidity environment change to SiOx films, and the SiOx films are further oxidized excessively. The excess oxidation mechanism of SiOx films which are the initial process of so-called hydrolysis were analyzed by a molecular orbital calculation.