[6a-PA9-1~11] 13.3 Insulator technology

[6a-PA9-4] Trichloroethene Effect on Redaction in Residual OH Content in Low-Temperature Si Oxide Films Produced by APCVD with Organic Silicon Gas Source

〇Susumu Horita¹, Jain Puneet¹ (1.Japan Adv. Ins. Sci & Tech.)

Keywords:silicon oxide film, low-temperature fabrication, organic silicon gas

Low-temperature fabrication of Si oxide films with higher insulation property is desired for various electron devices in future. It is well known that low-temperature Si oxide films produced from organic Si deposition source contain lots of OH bonds, which markedly degrade electric insulator property. We produced Si oxide films by APCVD using low cost and safe silicone oil and ozone at 200^oC. Further using trichloroethylene (TCE) gas, it was found that the content of OH bond in the deposited film is fairly reduced by 1/3 as well as the deposition rate is increase 3 times, compared with no TCE.