Theoretical study on interface orientation dependence of Si thermal oxidation based on Si emission model

Takuya Nagura; Shingo Kawachi; Kenta Chokawa; Hiroki Shirakawa; Masaaki Araidai; Hiroyuki Kageshima; Tetsuo Endoh; Kenji Shiraishi

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Tue. Sep 5, 2017 1:45 PM - 4:30 PM C11 (Office 1)

Masao Inoue(Renesas), Takanobu Watanabe(Waseda Univ.)

4:00 PM - 4:15 PM

[5p-C11-9] Theoretical study on interface orientation dependence of Si thermal oxidation based on Si emission model

〇Takuya Nagura¹, Shingo Kawachi¹, Kenta Chokawa¹, Hiroki Shirakawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Interdisciplinary Graduate School of Science and Engineering, Shimane Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.CIES, Tohoku Univ., 6.JST-ACCEL)

Keywords:Silicone, First-principles calculation