[5a-C11-1~11] 13.3 Insulator technology

[5a-C11-11] First-principles calculation of leakage current caused by oxygen vacancy at HfO₂/SiO₂

〇Kensuke Takagi¹, Tomoya Ono^1,2 (1.Univ. of Tsukuba, 2.CCS, Univ. of Tsukuba)

Keywords:semiconductor, high-k, HfO2

MOSFET using high-k materials have been suding for a long time and it is known that HfO₂ is a good candidate. Generaly, Oxygen vacancy(VO) in the oxydes gives rise to leakage current and degrades device performance. In this study, We caluculate the leakage current caused by VO at the HfO₂/SiO₂ interface. We revealed that the leakage current through VO state in the HfO₂ layer is much lager than that in the SiO₂ layer.